About Us
Home 경로 화살표 About Us 경로 화살표 Press Room
Press Room
Press Releases
MX to Present at 2018 Needham Growth Conference
Date : 2018/01/16

MagnaChip to Present at 2018 Needham Growth Conference
 

SEOUL, South Korea and SAN JOSE, Calif., Jan. 16, 2018 /PRNewswire/ -- MagnaChip Semiconductor Corporation ("MagnaChip") (NYSE: MX) today announced that members of the executive management team will make an investor presentation at the 2018 Annual Needham Growth Conference in New York City on Wednesday, January 17, 2018 at 1:30 p.m. EST. An audio webcast of the presentation can be heard here: http://wsw.com/webcast/needham84/mx/

The webcast link also can be accessed within the "Investors" section of the MagnaChip website, under the heading of "Investor Events." A replay of the webcast will be available one hour after the conclusion of the presentation and will be accessible on the MagnaChip website for 90 days.

About MagnaChip Semiconductor
MagnaChip is a designer and manufacturer of analog and mixed-signal semiconductor platform solutions for communications, IoT, consumer, industrial and automotive applications. The Company's Standard Products Group and Foundry Services Groups provide a broad range of standard products and manufacturing services to customers worldwide. MagnaChip, with over 30 years of operating history, owns a portfolio of approximately 3,300 registered patents and pending applications, and has extensive engineering, design and manufacturing process expertise. For more information, please visit www.magnachip.com. Information on or accessible through, MagnaChip's website is not a part of, and is not incorporated into, this release.


CONTACTS:

In the United States:
Bruce Entin
Investor Relations
Tel. +1.408.625.1262
Investor.relations@magnachip.com

In Korea:
Chankeun Park
Director, Public Relations
Tel. +82.2.6903.5223
chankeun.park@magnachip.com

Next 다음글 화살표
MX Schedules Fourth Quarter 2017 Earnings Release and Conference Call on February 6, 2018
Previous 이전글 화살표
MX Offers Multi-Level Thick IMD Process for Capacitor with Ultra-High Breakdown Voltage